FCH76N60N datasheet
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
О ДАТАШИТЕ
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МаркировкаFCH76N60N
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ПроизводительFairchild Semiconductor
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ОписаниеFairchild Semiconductor FCH76N60N Configuration: Single Continuous Drain Current: 76 A Current - Continuous Drain (id) @ 25?° C: 76A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 90 S Gate Charge (qg) @ Vgs: 285nC @ 10V Gate-source Breakdown Voltage: +/- 30 V Input Capacitance (ciss) @ Vds: 12385pF @ 100V Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-247-3 Power - Max: 543W Power Dissipation: 543 W Rds On (max) @ Id, Vgs: 36 mOhm @ 38A, 10V Resistance Drain-source Rds (on): 28 mOhms Series: SupreMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 28 mOhms Forward Transconductance gFS (Max / Min): 90 S Factory Pack Quantity: 150
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